DAM1

Project Description产品描述

IGBT Damping Capacitor DAM1
DAM1绝缘栅双极晶体管阻尼电容器

Description 概述

Damping capacitors DAM are used for protecting semiconductors (IGBT transistors). They are charged and discharged repetitively. Very high peak currents are carried.
阻尼电容器坝用于保护半导体(IGBT 绝缘栅双极晶体管)。他们反复充电和放电,运载非常高的峰值电流。

Construction 结构

The self healing capacitor elements are enclosed in a cylindrical case sealed with PU resin. They are constructed from PP film. This enables the unit to carry high inrush currents with low self inductance and series resistance.
自愈式电容元件被封装在用PU树脂密封的圆筒状外壳中。它们是由聚丙烯膜构成的,这使得该产品能够携带具有低自感和串联电阻的高浪涌电流。

Also can support high peak currents and high currents RMS. Capacitor may be assembled at the position that IGBT requires.
该产品还可以支持高峰值电流和高电流均方根值,电容器可在IGBT( 绝缘栅双极晶体管)要求的位置组装。

Rated voltage UN DC
额定电压
1000 – 3200 V
Self inductance LN
自感
≤ 10nH
Dielectric
电介质
Polypropylene
聚丙烯
Capacitance tolerance
电容公差
± 10%
Working temperature
工作温度
– 25 / 70 ºC
Storage temperature
储存温度
– 40 / 70 ºC
Voltage test
测试电压
Between terminals (during 10s): 1,5xUN DC
接线端子之间(10秒内):1,5xUN DC
Max. Torque
最大扭矩
M8 – 7 Nm
Case
容器
Cylindrical
圆柱体
Overpressure disconnection
过压断开
No
Standard
标准
IEC 61071

Other powers, voltages and frequencies on request.
其他功率,电压和频率可按要求定做。

FileDateSize
Datasheet
产品资料
19/04/20180.1 MB