DAM2

Project Description产品描述

IGBT Damping Capacitor DAM2
DAM2绝缘栅双极晶体管阻尼电容器

Description 概述

Damping capacitors DAM are used for protecting semiconductors (IGBT transistors). They are charged and discharged repetitively. Very high peak currents are carried.
阻尼电容器坝用于保护半导体(IGBT 绝缘栅双极晶体管)。他们反复充电和放电,运载非常高的峰值电流。

Construction 结构

The self-healing capacitor elements are enclosed in a rectangular plastic case sealed with PU resin. They are constructed from PP film technology MKP. This enables the unit to carry high inrush currents with low self-inductance and series resistance.
自愈式电容元件被封装在用PU树脂密封的圆筒状外壳中。它们是由聚丙烯膜构成的,这使得该产品能够携带具有低自感和串联电阻的高浪涌电流。

Their terminals allow fixing on the semiconductor. They can be assembled on the position that semiconductor requires.
它们的接线端子允许固定在半导体上。它们可以组装在半导体所需的位置上。

Rated voltage UN DC
额定电压
2500 – 3600 V
Self inductance LN
自感
≤ 12nH
Dielectric
电介质
Polypropylene
聚丙烯
Capacitance tolerance
电容公差
± 10%
Working temperature
工作温度
– 25 / 70 ºC
Storage temperature
储存温度
– 40 / 70 ºC
Voltage test
测试电压
Between terminals (during 10s): 1,5xUN DC
接线端子之间(10秒内):1,5xUN DC
Fixing
固定件
M5

M6

Case
容器
Prismatic
Overpressure disconnection
过压断开
No
Standard
标准
IEC 61071

Other powers, voltages and frequencies on request.
其他功率,电压和频率可按要求定做。

FileDateSize
Datasheet
产品资料
19/04/20180.1 MB